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 BCR5KM-12
Triac
Medium Power Use
REJ03G0315-0200 Rev.2.00 Nov.09.2004
Features
* IT(RMS) : 5 A * VDRM : 600 V * IFGT*I, IRGT*I, IRGT*III : 15 mA (10 mA)Note3 * Insulated Type * Planar Passivation Type * UL Recognized : Yellow Card No. E223904 File No. E80271
Outline
TO-220FN
2
1. T1 Terminal 2. T2 Terminal 3. Gate Terminal
3
1 1 23
Applications
Electric rice cooker, electric pot, and controller for other heater
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V
Rev.2.00,
Nov.09.2004,
page 1 of 6
BCR5KM-12
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT(RMS) ITSM I2 t PGM PG(AV) VGM IGM Tj Tstg -- Viso Ratings 5 50 10.4 3 0.3 10 2 - 40 to +125 - 40 to +125 2.0 2000 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360 conduction, Tc = 103C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ta = 25C, AC 1 minute, T1*T2*G terminal to case
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 I II III I II III Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth(j-c) Rth(j-a) Min. -- -- -- -- -- -- -- -- 0.2 -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 15Note3 15Note3 15Note3 -- 3.8 50 Unit mA V V V V mA mA mA V C/W C/W Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 7 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C, VD = 1/2 VDRM Junction to caseNote4 Junction to ambient
Gate trigger currentNote2
Gate non-trigger voltage Thermal resistance Thermal resistance
Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. High sensitivity (IGT 10 mA) is also available. (IGT item: 1) 4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
Rev.2.00,
Nov.09.2004,
page 2 of 6
BCR5KM-12
Performance Curves
Maximum On-State Characteristics
102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 100
Rated Surge On-State Current
Surge On-State Current (A)
90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102
On-State Current (A)
Tj = 25C
On-State Voltage (V)
Conduction Time
102
7 5 3 2
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs. Junction Temperature
103 7 5 4 3 2 102 7 5 4 3 2
Typical Example IRGT III
VGM = 10V PGM = 3W IGM = 2A
Gate Voltage (V)
101
7 5 3 VGT = 1.5V 2
IFGT I
100
7 5 3 2
IGT = 15mA PG(AV) = 0.3W
IRGT I
VGD = 0.2V 10 -1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
101 -60 -40 -20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140
Maximum Transient Thermal Impedance Characteristics (Junction to case)
Transient Thermal Impedance (C/W)
102 2 3 5 7 103 2 3 5 7 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 -1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Typical Example
Junction Temperature (C)
Conduction Time
Rev.2.00,
Nov.09.2004,
page 3 of 6
BCR5KM-12
Maximum Transient Thermal Impedance Characteristics (Junction to ambient)
Transient Thermal Impedance (C/W)
102
7 5 4 3 2
Maximum On-State Power Dissipation
10
On-State Power Dissipation (W)
9 8
360 Conduction 7 Resistive, 6 inductive loads
5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
101
7 5 4 3 2
100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs. RMS On-State Current
160
Allowable Ambient Temperature vs. RMS On-State Current
160
120 100 80 60 40
Ambient Temperature (C)
Curves apply regardless 140 of conduction angle
Case Temperature (C)
All fins are black painted 140 aluminum and greased 120 x 120 x t2.3 120 100 x 100 x t2.3 60 x 60 x t2.3 100
80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 1 2 3 4
360 Conduction 20 Resistive, inductive loads 0 0 1 2 3 4
5
6
7
8
5
6
7
8
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Allowable Ambient Temperature vs. RMS On-State Current
160
Repetitive Peak Off-State Current vs. Junction Temperature
105
7 Typical Example 5 3 2
Ambient Temperature (C)
140 120 100 80 60 40 20 0 0 0.5
Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads
104
7 5 3 2
103
7 5 3 2
1.0
1.5
2.0
2.5
3.0
102 -60 -40 -20 0 20 40 60 80 100 120 140
RMS On-State Current (A)
Junction Temperature (C)
Rev.2.00,
Nov.09.2004,
page 4 of 6
BCR5KM-12
Holding Current vs. Junction Temperature
102
7 5 4 3 2
Latching Current vs. Junction Temperature
103
7 5
Distribution
Latching Current (mA)
Holding Current (mA)
3 2
Distribution T2+, G- Typical Example
Typical Example
102
7 5 3 2
101
7 5 4 3 2
101
7 5 3 T2+, G+ 2 Typical Example T2-, G-
VD = 12V
100 -60 -40 -20 0 20 40 60 80 100 120 140
100 -60 -40 -20 0 20 40 60 80 100 120 140
Junction Temperature (C)
Junction Temperature (C)
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Junction Temperature
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
160 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140
Breakover Voltage vs. Rate of Rise of Off-State Voltage
160 140 120 100 80 60 40
Typical Example
Typical Example Tj = 125C
III Quadrant
I Quadrant
20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (C)
Rate of Rise of Off-State Voltage (V/s)
Gate Trigger Current vs. Gate Current Pulse Width
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC)
103
7 5 4 3 2
Gate Trigger Characteristics Test Circuits
6 6
IRGT III
Typical Example
IRGT I
6V V
A 330
6V V
A 330
102
7 5 4 3 2
IFGT I
Test Procedure I 6
Test Procedure II
101 0 10
6V
2 3 4 5 7 101 2 3 4 5 7 102
A V 330
Gate Current Pulse Width (s)
Test Procedure III
Rev.2.00,
Nov.09.2004,
page 5 of 6
BCR5KM-12
Package Dimensions
TO-220FN
EIAJ Package Code JEDEC Code Mass (g) (reference value)
2.0
Lead Material
Cu alloy
10 0.3
2.8 0.2
15 0.3
3 0.3
3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
6.5 0.3
0.75 0.15
2.54 0.25
2.54 0.25
4.5 0.2
Symbol A A1 A2 b D E e x y y1 ZD ZE
Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example BCR5KM-12RA BCR5KM-12RA-A8
Straight type Plastic Magazine (Tube) 50 Type name +RA Lead form Plastic Magazine (Tube) 50 Type name +RA - Lead forming code Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Nov.09.2004,
page 6 of 6
2.6 0.2
Dimension in Millimeters Min Typ Max
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0


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